Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient

Mechanical activation in mechanical removal of GaN using diamond tip and mechanochemical Al2O3 are described by the Archard equation mechanically assisted Arrhenius-type kinetic model, respectively. Evident material-removal under elastic contact occurs with assistance interfacial reactions. By analyzing reactions model Hertzian mechanics, critical volume barrier determined semiquantitatively. The originating from chemically active counter-surface facilitates atomic attrition altering energy reaction kinetics. This work can provide deep insights into mechanochemical-removal mechanism GaN.